PART |
Description |
Maker |
PTF180601 |
LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805-1880 MHz, 1930-1990 MHz
|
Infineon Technologies A...
|
MW5IC2030MBR1 MW5IC2030GMBR1 |
RF LDMOS Wideband Integrated Power Amplifiers 1930 MHz - 1990 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER 1930–1990 MHz, 30 W, 26 V GSM/GSM EDGE, W–CDMA, PHS RF LDMOS Wideband Integrated Power Amplifier
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] Freescale (Motorola)
|
MAFRIN0540 |
Single Junction Drop-In Circulator 1930 MHz-1990 MHz
|
M/A-COM Technology Solutions, Inc.
|
DSW1064-A |
1930 MHz - 1990 MHz RF/MICROWAVE ISOLATOR
|
|
PD60-0012-06S PD60-0003-04S |
1930 MHz - 1990 MHz RF/MICROWAVE COMBINER, 0.5 dB INSERTION LOSS 1930 MHz - 1990 MHz RF/MICROWAVE COMBINER, 0.27 dB INSERTION LOSS
|
M/A-COM Technology Solutions, Inc.
|
1920A05 |
5 W, 26 V, 1930-1990 MHz common emitter transistor
|
GHz Technology
|
XD010-24S-D2F |
1930-1990 MHz Class A/AB 12W CDMA Driver Amplifier
|
sirenza.com SIRENZA MICRODEVICES
|
1920AB60 |
60 W, 25 V, 1930-1990 MHz common emitter transistor BJT 双极型晶体管
|
GHz Technology Micrel Semiconductor, Inc.
|
PH1920-45 |
WIRELESS BIPOLAR POWER TRASISTOR 45W 1930-1990 MHZ
|
Tyco Electronics
|
PTFB191501E PTFB191501F |
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 ?1990 MHz
|
Infineon Technologies AG
|
PTFB193404F |
Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930-1990 MHz
|
Infineon Technologies AG
|